Samsung 990 EVO Plus 4TB M.2-2280 Solid State Drive MZ-V9S4T0BW

Application

Client PCs

Capacity

4,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Form Factor

M.2 (2280)

Interface

PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0

Dimension (WxHxD)

Max 80.15 x Max 22.15 x Max 2.38 mm

Weight

Max 9.0g Weight

Storage Memory

Samsung V-NAND TLC

Controller

Samsung in-house Controller

Cache Memory

HMB(Host Memory Buffer)

Special Feature

TRIM Support

Supported

S.M.A.R.T Support

Supported

GC (Garbage Collection)

Auto Garbage Collection Algorithm

Encryption Support

AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)

WWN Support

Not supported

Device Sleep Mode Support

Yes

Performance

Sequential Read

Up to 7,250 MB/s * Performance may vary based on system hardware & configuration

Sequential Write

Up to 6,300 MB/s * Performance may vary based on system hardware & configuration

Random Read (4KB, QD32)

Up to 1,050,000 IOPS * Performance may vary based on system hardware & configuration

Random Write (4KB, QD32)

Up to 1,400,000 IOPS * Performance may vary based on system hardware & configuration

Environment

Average Power Consumption (system level)

Average: Read 5.5 W / Write 4.8 W* Actual power consumption may vary depending on system hardware & configuration

Power consumption (Idle)

Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration

Power Consumption (Device Sleep)

Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration

Allowable Voltage

3.3 V ± 5 % Allowable voltage

Reliability (MTBF)

1.5 Million Hours Reliability (MTBF)

Operating Temperature

0 - 70 C Operating Temperature

Shock

1,500 G & 0.5 ms (Half sine)